Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Graphene formation mechanisms on 4H-SiC(0001)

MOCVD Growth of GaBN on 6H-SiC (0001) Substrates

BxGa1–xN films were deposited on 6H-SiC (0001) substrates at 1000°C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. The presence of boron was detected by Auger scanning microprobe, the shift of the (00.2) x-ray diffraction peak, and low-temperature photoluminescence. A single-phase BxGa1–xN alloy with x = 1.5% was produced at the gas phase B/Ga ratio of 0.005....

Chloride based CVD of 3C-SiC on (0001) α-SiC substrates

A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, in situ surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely ...

Temperature-dependence of Epitaxial Graphene Formation on SiC(0001)

The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but w...

1 Temperature - dependence of Epitaxial Graphene Formation on SiC ( 0001 )

The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but w...